Characterization of Ag-doped Cu2ZnSnSe4 bulks material and their application as thin film semiconductor in solar cells

Materials Science & Engineering

Sabtu, 12 Mei 2018 11:05 | Sudah dibaca 6 kali

Cu2ZnSnSe4 (CZTSe) is a promising absorber layer material for thin film solar cells because of the non-toxicity and abundance of the constituent elements. Ag-doped CZTSe bulks and thin films with the (Cu2-xAgx)ZnSnSe4 (Ag-x-CZTSe) formula at x = 0, 0.1, 0.2, 0.3, and 0.4 were prepared at 600 oC by reactive sintering and selenization. We successfully demonstrated Ag-doped CZTSe materials without any different result between bulks preparation and thin film devices. Defect chemistry was studied by measuring structural and electrical properties of Ag-doped CZTSe as a function of dopant concentration. The enhanced of the device performance are shown with the increasing of Ag content to the CZTSe. The films has a stack structure of Ag/ITO/ZnO/CdS/Ag-CZTSe/Mo/soda-lime glass substrate. The efficiencies of Ag-x-CZTSe thin film solar cells at x = 0, 0.1, 0.2, 0.3 and 0.4 were 1.90, 2.4, and 3.4, 3.1, and 2.9% respectively.

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