Journal of Solid State Chemistry

Selasa, 24 April 2018 19:07 | Sudah dibaca 812 kali

CuBiS₂ bulks were prepared by reactive sintering the mixture of Cu₂S and Bi₂S₃ at 300, 350, 400, and 450 ^oC for 2 h and at the sintering temperature of 400 ^oC for 1, 1.5, 2, 2.5, and 3 h under a compensation disc of CuS for atmospheric control. Composition, structure, morphology, and electrical properties of the sintered bulks were analyzed. The compositions of Cu, Bi, and S did not change until the temperature reached at 450 ^oC. The highest electrical conductivity of 4.3 S cm^-1 and the highest Hall mobility of 11.1 cm²V^-1s^-1 were obtained for CuBiS₂ sintered at 400 ^oC for 2 h. The deviation in the S/(Cu + Bi) ration caused the degradation of electrical properties, though the CuBiS₂ remained as a single phaase. Therefore, CuBiS₂, a less studied ternary copper based sulfide, is the p-type semiconductor for potential energy-related application and needs to have a good control in composition.

Kata Kunci: CuBiS2, Reactive sintering, Microstructure, Electrical property

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